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数字集成电路 设计透视 英文 影印版PDF|Epub|txt|kindle电子书版本网盘下载

数字集成电路 设计透视 英文 影印版
  • 拉贝(Rabaey J.M.)著 著
  • 出版社: 北京:清华大学出版社
  • ISBN:7302030607
  • 出版时间:1999
  • 标注页数:706页
  • 文件大小:81MB
  • 文件页数:725页
  • 主题词:

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图书目录

Chapter 1:Introduction1

1.1 A Historical Perspective2

1.2 Issues in Digital Integrated Circuit Design4

1.3 To Probe Further12

1.4 Exercises15

PART Ⅰ:A CIRCUIT PERSPECTIVE17

Chapter 2:The Devices17

2.1 Introduction18

2.2 The Diode18

2.2.1 A First Glance at the Device19

2.2.2 Static Behavior22

2.2.3 Dynamic,or Transient,Behavior27

2.2.4 The Actual Diode—Secondary Effects36

2.2.5 The SPICE Diode Model38

2.3 The MOS(FET)Transistor39

2.3.1 A First Glance at the Device39

2.3.2 Static Behavior41

2.3.3 Dynamic Behavior47

2.3.4 The Actual MOS Transistor—Secondary Effects50

2.3.5 SPICE Models for the MOS Transistor57

2.4 The Bipolar Transistor62

2.4.1 A First Glance at the Device63

2.4.2 Static Behavior64

2.4.3 Dynamic Behavior72

2.4.4 The Actual Bipolar Transistor—Secondary Effects79

2.4.5 SPICE Models for the Bipolar Transistor81

2.5 A Word on Process Variations84

2.6 Perspective:Future Device Developments86

2.7 Summary87

2.8 To Probe Further89

2.9 Exercises and Design Problems90

Appendix A:Layout Design Rules97

Appendix B:Small-Signal Models105

Chapter 3:The Inverter108

3.1 Introduction109

3.2 Definitions and Properties109

3.2.1 Area and Complexity109

3.2.2 Functionality and Robostness:The Static Behavior110

3.2.3 Performance:The Dynamic Behavior116

3.2.4 Power and Energy Consumption119

3.3 The Static CMOS Inverter120

3.3.1 A First Glance120

3.3.2 Evaluating the Robusmess of the CMOS Inverter:The Static Behavior124

3.3.3 Performance of CMOS Inverter:The Dynamic Behavior129

3.3.4 Power Consumption and Power-Delay Product141

3.3.5 A Look into the Future:Effects of Technology Scaling146

3.4 The Bipolar ECL Inverter150

3.4.1 Issues in Bipolar Digital Design:A Case Study150

3.4.2 The Emitter-Coupled Logic(ECL)Gate at a Glance155

3.4.3 Robustness and Noise Immunity:The Steady-State Characteristics160

3.4.4 ECL Switching Speed:The Transient Behavior165

3.4.5 Power Consumption176

3.4.6 Looking Ahead:Scaling the Technology177

3.5 Perspective:Area,Performance,and Dissipation179

3.6 Summary179

3.7 To Probe Further180

3.8 Exercises and Design Problems181

Chapter 4:Designing Combinational Logic Gates in CMOS189

4.1 Introduction190

4.2 Static CMOS Design191

4.2.1 Complementary CMOS191

4.2.2 Ratioed Logic202

4.2.3 Pass-Transistor Logic210

4.3 Dynamic CMOS Design222

4.3.1 Dynamic Logic:Basic Principles223

4.3.2 Performance of Dynamic Logic225

4.3.3 Noise Considerations in Dynamic Design227

4.3.4 Cascading Dynamic Gates231

4.4 Power Consumption in CMOS Gates234

4.4.1 Switching Activity of a Logic Gate234

4.4.2 Glitching in Static CMOS Circuits240

4.4.3 Short-Circuit Currents in Static CMOS Circuits242

4.4.4 Analyzing Power Consumption Using SPICE244

4.4.5 Low-Power CMOS Design246

4.5 Perspective:How to Choose a Logic Style252

4.6 Summary253

4.7 To Probe Further254

4.8 Exercises and Design Problems255

Appendix C:Layout Techniques for Complex Gates264

Chapter 5:Very High Performance Digital Circuits269

5.1 Introduction270

5.2 Bipolar Gate Design270

5.2.1 Logic Design in ECL270

5.2.2 Differendal ECL272

5.2.3 Current Mode Logic278

5.2.4 ECL with Active Pull-Downs281

5.2.5 Altemative Bipolar Logic Styles283

5.3 The BiCMOS Approach287

5.3.1 The BiCMOS Gate at a Glance288

5.3.2 The Static Behavior and Robusmess Issues291

5.3.3 Performance of the BiCMOS Inverter293

5.3.4 Power Consumption297

5.3.5 Technology Scaling298

5.3.6 Designing BiCMOS Digital Gates299

5.4 Digital Gallium Arsenide Design300

5.4.1 GaAs Devices and Their Properties301

5.4.2 GaAs Digital Circuit Design307

5.5 Low-Temperature Digital Circuits312

5.5.1 Low-Temperature Silicon Digital Circuits312

5.5.2 Superconducting Logic Circuits314

5.6 Perspective:When to Use High-Performance Technologies321

5.7 Summary322

5.8 To Probe Further323

5.9 Exercises and Design Problems325

Appendix D:The Schottky-Barrier Diode330

Chapter 6:Designing Sequential Logic Circuits332

6.1 Introduction333

6.2 Static Sequential Circuits333

6.2.1 Bistability333

6.2.2 Flip-Flop Classification335

6.2.3 Master-Slave and Edge-Triggered FFs338

6.2.4 CMOS Static Flip-Flops341

6.2.5 Bipolar Static Flip-Flops345

6.3 Dynamic Sequential Circuits347

6.3.1 The Pseudostatic Latch348

6.3.2 The Dynamic Two-Phase Flip-Flop350

6.3.3 The C2MOS Latch351

6.3.4 NORA-CMOS—A Logic Style for Pipelined Structures355

6.3.5 True Single-Phase Clocked Logic (TSPCL)359

6.4 Non-Bistable Sequential Circuits362

6.4.1 The Schmitt Trigger363

6.4.2 Monostable Sequential Circuits369

6.4.3 Astable Circuits371

6.5 Perspective:Choosing a Clocking Strategy374

6.6 Summary375

6.7 To Probe Further375

6.8 Exercises and Design Problems376

PART Ⅱ:A SYSTEMS PERSPECTIVE383

Chapter 7:Designing Arithmetic Building Blocks383

7.1 Introduction384

7.2 Datapaths in Digital Processor Architectures384

7.3 The Adder386

7.3.1 The Binary Adder:Definitions386

7.3.2 The Full Adder:Circuit Design Considerations389

7.3.3 The Binary Adder:Logic Design Considerations396

7.4 The Multiplier408

7.4.1 The Multiplier:Definitions408

7.4.2 The Array Multiplier408

7.4.3 Other Multiplier Structures412

7.5 The Shifter414

7.5.1 Barrel Shifter414

7.5.2 Logarithmic Shifter416

7.6 Other Arithmetic Operators417

7.7 Power Considerations in Datapath Structures418

7.7.1 Reducing the Supply Voltage418

7.7.2 Reducing the Effective Capacitance421

7.8 Perspective:Design as a Trade-off424

7.9 Summary425

7.10 To Probe Further426

7.11 Exercises and Design Problems427

Appendix E:From Datapath Schematics to Layout434

Chapter 8:Coping with Interconnect438

8.1 Introduction439

8.2 Capacitive Parasitics439

8.2.1 Modeling Interconnect Capacitance439

8.2.2 Capacitance and Reliability—Cross Talk445

8.2.3 Capacitance and Performance in CMOS446

8.2.4 Capacitance and Performance in Bipolar Design461

8.3 Resistive Parasitics464

8.3.1 Modeling and Scaling of Interconnect Resistance464

8.3.2 Resistance and Reliability—Ohmic Voltage Drop467

8.3.3 Electromigration469

8.3.4 Resistance and Performance—RC Delay471

8.4 Inductive Parasitics477

8.4.1 Sources of Parasitic Inductances477

8.4.2 Inductance and Reliability—Voltage Drop478

8.4.3 Inductance and Performance—Transmission Line Effects482

8.5 Comments on Packaging Technology493

8.5.1 Package Materials494

8.5.2 Interconnect Levels494

8.5.3 Thermal Considerations in Packaging499

8.6 Perspective:When to Consider Interconnect Parasitics500

8.7 Chapter Summary501

8.8 To Probe Further502

8.9 Exercises and Design Problems503

Chapter 9:Timing Issues in Digital Circuits510

9.1 Introduction511

9.2 Clock Skew and Sequential Circuit Performance511

9.2.1 Single-Phase Edge-Triggered Clocking513

9.2.2 Two-Phase Master-Slave Clocking515

9.2.3 Other Clocking Styles517

9.2.4 How to Counter Clock Skew Problems517

9.2.5 Case Study—The Digital Alpha 21164 Microprocessor520

9.3 Self-Timed Circuit Design522

9.3.1 Self-Timed Concept522

9.3.2 Completion-Signal Generation525

9.3.3 Self-Timed Signaling528

9.4 Synchronizers and Arbiters533

9.4.1 Synchronizers—Concept and Implementation533

9.4.2 Arbiters538

9.5 Clock Generation and Synchronization538

9.5.1 Clock Generators538

9.5.2 Synchronization at the System Level540

9.6 Perspective:Synchronous versus Asynchronous Design543

9.7 Summary544

9.8 To Probe Further544

9.9 Exercises and Design Problems545

Chapter 10:Designing Memory and Array Structures551

10.1 Introduction552

10.2 Semiconductor Memories—An Introduction552

10.2.1 Memory Classification552

10.2.2 Memory Architectures and Building Blocks555

10.3 The Memory Core559

10.3.1 Read-Only Memories559

10.3.2 Nonvolatile Read-Write Memories573

10.3.3 Read-Write Memories(RAM)578

10.4 Memory Peripheral Circuitry590

10.4.1 The Address Decoders591

10.4.2 Sense Amplifiers596

10.4.3 Drivers/Buffers603

10.4.4 Timing and Control603

10.5 Memory Reliability and Yield605

10.5.1 Signal-To-Noise Ratio605

10.5.2 Memory yield610

10.6 Case Studies in Memory Design611

10.6.1 The Programmable Logic Array(PLA)612

10.6.2 A 4 Mbit SRAM616

10.7 Perspective:Semiconductor Memory Trends and Evolutions617

10.8 Summary620

10.9 To Probe Further621

10.10 Exercises and Design Problems622

Chapter 11:Design Methodologies629

11.1 Introduction630

11.2 Design Analysis and Simulation630

11.2.1 Representing Digital Data as a Continuous Entity631

11.2.2 Representing Data as a Discrete Entity633

11.2.3 Using Higher-Level Data Models637

11.3 Design Verification638

11.3.1 Electrical Verification639

11.3.2 Timing Verification640

11.3.3 Functional(or Formal)Verification641

11.4 Implementation Approaches642

11.4.1 Custom Circuit Design643

11.4.2 Cell-Based Design Methodology646

11.4.3 Array-Based Implementation Approaches655

11.5 Design Synthesis667

11.5.1 Circuit Synthesis668

11.5.2 Logic Synthesis669

11.5.3 Architecture Synthesis671

11.6 Validation and Testing of Manufactured Circuits672

11.6.1 Test Procedure674

11.6.2 Design for Testability675

11.6.3 Test-Pattern Generation684

11.7 Perspective and Summary687

11.8 To Probe Further688

11.9 Exercises and Design Problems691

Problem Solutions693

Index700

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